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  s r f 1 6 6 0 notes : 1.pulse test: 300 s pulse width,1% duty cycle 2.thermal resistance from junction to case maximum ratings and electrical characteristics (r atings at 25 c ambient temperature unless other wise specified ,single phase ,half wave ,resistive or inductive load. f or capacitive load, derate by 20%.) features mechanical data case : jedec ito -220a c molded plastic body t erminals : l ead solderable per mil -std -750,method 2026 p olarity : as mark ed. mounting p osition : any w eight : 0.08ounce, 2.24 gram dimensions in inches and (millimeters) plastic pack age has under writers l aborator y flammability classification 94v -0 metal silicon junction ,majority carrier conduction guard ring for over voltage protection l ow power loss ,high efficiency high current capability ,l ow for ward voltage drop high surge capability f or use in low voltage ,high frequency inver ters, free wheeling ,and polarity protection applications dual rectifier construction high temperature soldering guaranteed:260 c/10 seconds,, 0.25"(6.35mm)from case component in accordance to r ohs 2002 / 95 / ec and weee 2002 / 96 / ec s r f 1 6 2 0 t h r u s r f 1 6 2 0 0 ( s i n g l e c h i p ) schottky barrier rectifier reverse voltage - 20 to 200 volts forward current - 16.0amperes maximum repetitive peak reverse voltage v rrm v olts v olts v olts v olts m a a mps a mps v rms v dc i (a v) i f sm t stg v f i r r jc maximum rms voltage maximum dc blocking voltage maximum instantaneous for ward voltage at 16.0 a t =25 c t =125 c c c t ypical thermal resistance (note 2) operating junction temperature range storage temperature range maximum instantaneous reverse current at rated dc blocking voltage(note 1) p eak for ward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) -65 to+150 -65 to+150 3 . 0 0.2 30 50 c/w c c t j 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 56 80 100 70 150 16.0 200.0 symbols units srf 1620 srf 1630 srf 1640 srf 1650 srf 1660 srf 1680 srf 16100 maximum average for ward rectified current see f ig . 1 srf 16150 srf 16200 150 105 200 140 200 100 0 . 60 0.75 0.85 0.95 0.90 it o-220ac 0.177(4.50) 0.208(5.28) 0.029(0.73) 0.111(2.83) 0.140(3.55) 0.610(15.50) 0.136(3.45) 0.187(4.75) 0.272(6.90) 0.551(14.00) 0.029(0.73) 0.138(3.50) 0.192(4.88) 0.019(0.47) 0.101(2.57) 0.128(3.25) dia 0.571(14.50) 0.102(2.60) 0.167(4.25) 0.256(6.50) 0.496(12.60) 0.019(0.47) pin 0.388(9.85) 1 2 0.130(3.31) 0.11 0(2. 81) 0 . 4 1 0 ( 1 0 . 4 2 ) 0.056(1.43) 0.043(1.10) 1.161(29.50) 1.083(27.50) e?o?? xinghe electronics x h gaomi xinghe electronics co.,ltd. www.sddzg.com 1
r a ti n g s an d c h ar ac ter i sti c c u r ve s 0.1 0.01 0.1 1.0 10 100 1.0 10 0 50 100 150 200 250 40 0.2 20 0 40 60 80 100 120 140 1.0 2.0 5.0 10 20 50 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 0.4 1.0 10 40 60 100 100 200 1000 2000 4000 fig.4-typical junction capacitance fig.5-maximum non-repetitive peak forward surge current fig.2-typical instantaneous forward characteristics fig.3-typical reverse characteristics c a p a c i t a n c e ( p f ) i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a m p e r e s ) i n s t a n t a n e o u s r e v e r s e c u r r e n t ( m a ) p e a k f o r w a r d s u r g e c u r r e n t ( a m p e r e s ) inst ant aneous forw ard vol t age (vol ts) percent of ra ted peak reverse vol t age reverse vol t age (vol ts) number of cycles a t 60hz pulse width=300 s 1% duty cycle srf1650-srf16200 srf1620-srf1640 t c =25 c t c =25 c t c =75 c t c =125 c t c =125 c 0 50 100 150 0 4.0 12 8.0 20 16 fig.1-forward current derating curve a v e r a g e f o r w a r d c u r r e n t ( a m p e r e s ) lead tempera ture ( c) single phase half wa ve 50hz inductive or resistive l oad 8.3ms single half sine- wa ve (jedec method) s r f 1 6 2 0 t h r u s r f 1 6 2 0 0 ( s i n g l e c h i p ) e?o?? xinghe electronics gaomi xinghe electronics co.,ltd. www.sddzg.com 2


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